Part number:
BLS6G3135-120
Manufacturer:
NXP ↗ Semiconductors
File Size:
106.19 KB
Description:
Ldmos s-band radar power transistor.
BLS6G3135-120_NXPSemiconductors.pdf
Datasheet Details
Part number:
BLS6G3135-120
Manufacturer:
NXP ↗ Semiconductors
File Size:
106.19 KB
Description:
Ldmos s-band radar power transistor.
BLS6G3135-120, LDMOS S-Band radar power transistor
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation pulsed RF f (GHz) 3.1 to 3.5 VDS (V) 32 PL
BLS6G3135-120 Features
* I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %: N Output power = 120 W N Gain = 11 dB N Efficiency = 43 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I E
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