BLS8G2731L-400P

LDMOS S-band radar power transistor

NXP

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Datasheet Details

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BLS8G2731L-400P

Manufacturer:

NXP ↗

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132.83 KB

Description:

Ldmos s-band radar power transistor.
BLS8G2731L-400P; BLS8G2731LS-400P LDMOS S-band radar power transistor Rev. 1 * 26 May 2015 Product .
400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3..

✔ BLS8G2731L-400P Features

High efficiency
Excellent ruggedness
Designed for S-band operation
Excellent thermal stability
Easy power control
Integrated dual sided ESD protection enables

✔ BLS8G2731L-400P Application

in the frequency range from 2.7 GHz to 3.1 GHz. Table 1. Typical performance Typical RF performance at Tcas

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BLS8G2731L-400P LDMOS S-band radar power transistor NXP

Datasheet Details

File Size:

Description:

✔ BLS8G2731L-400P Features

✔ BLS8G2731L-400P Application

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