BLS8G2731L-400P LDMOS S-band radar power transistor

NXP

Description

BLS8G2731L-400P; BLS8G2731LS-400P LDMOS S-band radar power transistor Rev.1 * 26 May 2015 Product data sheet 1.Product profile 1.1 Genera.
400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.

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Datasheet Specifications

Part number: BLS8G2731L-400P
Manufacturer: NXP ↗
File Size: 132.83 KB
Datasheet: BLS8G2731L-400P-NXP.pdf
Description: LDMOS S-band radar power transistor

Features

* High efficiency
* Excellent ruggedness
* Designed for S-band operation
* Excellent thermal stability
* Easy power control
* Integrated dual sided ESD protection enables excellent off-state isolation
* High flexibility with respect to pulse formats
* Internally match

Applications

* in the frequency range from 2.7 GHz to 3.1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 200 mA; in a class-AB demo test circuit. Test signal f (GHz) VDS (V) PL(1dB) (W) Gp [1] (dB) D [1] (%) PL(2dB) (W) Gp [2] (dB) D [2] (%) pulse

BLS8G2731L-400P Distributors

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BLS8G2731L-400P LDMOS S-band radar power transistor NXP

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