Description
BLS8G2731L-400P; BLS8G2731LS-400P LDMOS S-band radar power transistor Rev.2 * 1 September 2015 Product data sheet 1.Product profile 1.1 G.
400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.
Features
* High efficiency
* Excellent ruggedness
* Designed for S-band operation
* Excellent thermal stability
* Easy power control
* Integrated dual sided ESD protection enables excellent off-state isolation
* High flexibility with respect to pulse formats
Applications
* in the frequency range from 2.7 GHz to 3.1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 200 mA; in a class-AB demo test circuit. Test signal
f
VDS PL(1dB)
Gp [1] D [1]
PL(2dB)
Gp [2]
D [2]
(GHz)
(V) (W)
(dB) (%)
(W)
(dB) (%)
pu
