BLS8G2731L-400P LDMOS S-band radar power transistor

Ampleon

Description

BLS8G2731L-400P; BLS8G2731LS-400P LDMOS S-band radar power transistor Rev.2 * 1 September 2015 Product data sheet 1.Product profile 1.1 G.
400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.

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Datasheet Specifications

Part number: BLS8G2731L-400P
Manufacturer: Ampleon
File Size: 363.99 KB
Datasheet: BLS8G2731L-400P-Ampleon.pdf
Description: LDMOS S-band radar power transistor

Features

* High efficiency
* Excellent ruggedness
* Designed for S-band operation
* Excellent thermal stability
* Easy power control
* Integrated dual sided ESD protection enables excellent off-state isolation
* High flexibility with respect to pulse formats

Applications

* in the frequency range from 2.7 GHz to 3.1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 200 mA; in a class-AB demo test circuit. Test signal f VDS PL(1dB) Gp [1] D [1] PL(2dB) Gp [2] D [2] (GHz) (V) (W) (dB) (%) (W) (dB) (%) pu

BLS8G2731L-400P Distributors

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BLS8G2731L-400P LDMOS S-band radar power transistor Ampleon

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