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BLS8G2731LS-400P, BLS8G2731L-400P LDMOS S-band radar power transistor

BLS8G2731LS-400P Description

BLS8G2731L-400P; BLS8G2731LS-400P LDMOS S-band radar power transistor Rev.1 * 26 May 2015 Product data sheet 1.Product profile 1.1 Genera.
400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.

BLS8G2731LS-400P Features

* High efficiency
* Excellent ruggedness
* Designed for S-band operation
* Excellent thermal stability
* Easy power control
* Integrated dual sided ESD protection enables excellent off-state isolation
* High flexibility with respect to pulse formats
* Internally match

BLS8G2731LS-400P Applications

* in the frequency range from 2.7 GHz to 3.1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 200 mA; in a class-AB demo test circuit. Test signal f (GHz) VDS (V) PL(1dB) (W) Gp [1] (dB) D [1] (%) PL(2dB) (W) Gp [2] (dB) D [2] (%) pulse

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This datasheet PDF includes multiple part numbers: BLS8G2731LS-400P, BLS8G2731L-400P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BLS8G2731LS-400P, BLS8G2731L-400P
Manufacturer
NXP ↗
File Size
132.83 KB
Datasheet
BLS8G2731L-400P-NXP.pdf
Description
LDMOS S-band radar power transistor
Note
This datasheet PDF includes multiple part numbers: BLS8G2731LS-400P, BLS8G2731L-400P.
Please refer to the document for exact specifications by model.

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