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BLS8G2731LS-400P Datasheet - NXP

LDMOS S-band radar power transistor

BLS8G2731LS-400P Features

* High efficiency

* Excellent ruggedness

* Designed for S-band operation

* Excellent thermal stability

* Easy power control

* Integrated dual sided ESD protection enables excellent off-state isolation

* High flexibility with respect to pulse formats

* Internally match

BLS8G2731LS-400P General Description

400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 200 mA; in a class-AB demo test circuit. Test signal f (GHz) VDS (V) PL(1dB) (W) Gp [1] (d.

BLS8G2731LS-400P Datasheet (132.83 KB)

Preview of BLS8G2731LS-400P PDF

Datasheet Details

Part number:

BLS8G2731LS-400P

Manufacturer:

NXP ↗

File Size:

132.83 KB

Description:

Ldmos s-band radar power transistor.
BLS8G2731L-400P; BLS8G2731LS-400P LDMOS S-band radar power transistor Rev. 1 26 May 2015 Product data sheet 1. Product profile 1.1 Genera.

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Stock and price

Distributor
ROHM Semiconductor
BR24G128FJ-5E2
2500 In Stock
Qty : 25000 units
Unit Price : $0.39

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BLS8G2731LS-400P LDMOS S-band radar power transistor NXP

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