MRF6V14300HR3 - RF Power Field Effect Transistors

Name: MRF6V14300HR3
SKU: MRF6V14300HR3-1546816

NXP

The MRF6V14300HR3 by NXP is a RF Power Field Effect Transistors. Below is the official datasheet preview.

Datasheet Details

Part number	MRF6V14300HR3
Manufacturer	NXP
File Size	667.31 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6V14300HR3-NXP.pdf
Additional preview pages of the MRF6V14300HR3 datasheet.

Characterized with Series Equivalent Large--Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 50 VDD Operation.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF6V14300H Rev. 3, 4/2010 MRF6V14300HR3 MRF6V14300HSR3 1400 MHz, 330 W, 50 V.

📁 MRF6V14300HR3 Similar Datasheet

MRF6V14300HSR3 - RF Power Field Effect Transistors (Motorola)
MRF6V10250HSR3 - RF Power Field Effect Transistor (Freescale Semiconductor)
MRF6V12500HR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6V12500HSR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6V13250HR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6V13250HSR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF6V2010NBR1 - RF Power Field Effect Transistor (Freescale Semiconductor)
MRF6V2010NR1 - RF Power Field Effect Transistor (Freescale Semiconductor)

Other Datasheets by NXP

Published: Oct 6, 2024 |