Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs RF Power transisto.
Features
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved
Applications
* operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications.
* Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout =
330 Watts Peak (39.6 W Avg. ), f = 1400 MHz, Pulse Width = 300 μsec, Duty Cycle = 12%
Power G
