MRF6V14300HSR3, MRF6V14300HR3 RF Power Field Effect Transistors

NXP

MRF6V14300HSR3 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs RF Power transisto.

MRF6V14300HSR3 Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved

MRF6V14300HSR3 Applications

* operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications.
* Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg. ), f = 1400 MHz, Pulse Width = 300 μsec, Duty Cycle = 12% Power G

📥 Download Datasheet

MRF6V14300HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6V14300HSR3, MRF6V14300HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF6V14300HSR3, MRF6V14300HR3
Manufacturer: NXP ↗
File Size: 667.31 KB
Datasheet: MRF6V14300HR3-NXP.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF6V14300HSR3, MRF6V14300HR3.
Please refer to the document for exact specifications by model.

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