* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved
MRF6V14300HSR3 Datasheet (667.31 KB)
MRF6V14300HSR3
667.31 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs RF Power transisto.
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