Datasheet Details
Part number:
MRF6V14300HSR3, MRF6V14300HR3
Manufacturer:
File Size:
667.31 KB
Description:
Rf power field effect transistors.
Note:
This datasheet PDF includes multiple part numbers: MRF6V14300HSR3, MRF6V14300HR3.
Please refer to the document for exact specifications by model.
MRF6V14300HSR3, MRF6V14300HR3, RF Power Field Effect Transistors
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle.
These devices are suitable for use in pulsed applications.
Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec, Duty Cycle = 12% Power Gain 18 dB D
MRF6V14300HSR3 Features
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved
📁 Related Datasheet
📌 All Tags
