BLF6G20LS-140 - Power LDMOS transistor

NXP Semiconductors

BLF6G20LS-140 Datasheet Preview — Preview of BLF6G20LS-140 PDF

Datasheet Details

Part number	BLF6G20LS-140
Manufacturer	NXP ↗ Semiconductors
File Size	92.62 KB
Description	Power LDMOS transistor
Datasheet	BLF6G20LS-140_NXPSemiconductors.pdf

BLF6G20LS-140 Product details

Description

140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. 37[1] ACPR (dBc) 40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10

Features

I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 mA: N Average output power = 35.5 W N Power gain = 16.5 dB (typ) N Efﬁciency = 30 % N IMD3 =.
37 dBc N ACPR =.
40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use I Compliant to Directive 200.

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Published: Jun 18, 2010 |