NX3008PBKS MOSFET

NXP Semiconductors

NX3008PBKS Description

NX3008PBKS 30 V, 200 mA dual P-channel Trench MOSFET Rev.1 * 1 August 2011 Product data sheet 1.Product profile 1.1 General .
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench.

NX3008PBKS Features

* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ESD protection up to 2 kV

NX3008PBKS Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -200 mA; Tj = 25 °C [1] Quick

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Datasheet Details

Part number: NX3008PBKS
Manufacturer: NXP ↗ Semiconductors
File Size: 332.14 KB
Datasheet: NX3008PBKS-NXPSemiconductors.pdf
Description: MOSFET

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