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FDC637AN N-Channel MOSFET

FDC637AN Description

FDC637AN FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET General .
Features This N-Channel 2.

FDC637AN Features

* This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
* 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(o

FDC637AN Applications

* DC/DC converter
* Load switch
* Battery Protection
* Low gate charge (10.5nC typical).
* High performance trench technology for extremely low RDS(ON).
* SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDC637AN-like datasheet