FDC638APZ - P-Channel MOSFET

Name: FDC638APZ
SKU: FDC638APZ-1492903

ON Semiconductor

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Datasheet Details

Part number	FDC638APZ
Manufacturer	ON Semiconductor
File Size	387.90 KB
Description	P-Channel MOSFET
Datasheet	FDC638APZ-ONSemiconductor.pdf

FDC638APZ Product details

Description

This P Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

Features

Max rDS(on) = 43 mW at VGS =.
4.5 V, ID =.
4.5 A.
Max rDS(on) = 68 mW at VGS =.
2.5 V, ID =.
3.8 A.
Low Gate Charge (8 nC typical).
High Performance Trench Technology for Extremely Low rDS(on).
SUPERSOTt.
6 Package: Small Footprint (72% smaller than Standard SO.
8) Low Profile (1 mm thick).
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 12, 2021 |