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FDC638APZ

P-Channel MOSFET

FDC638APZ Features

* Max rDS(on) = 43 mW at VGS =

* 4.5 V, ID =

* 4.5 A

* Max rDS(on) = 68 mW at VGS =

* 2.5 V, ID =

* 3.8 A

* Low Gate Charge (8 nC typical)

* High Performance Trench Technology for Extremely Low rDS(on)

* SUPERSOTt

* 6 Package:

FDC638APZ General Description

This P

*Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

*state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power app.

FDC638APZ Datasheet (387.90 KB)

Preview of FDC638APZ PDF

Datasheet Details

Part number:

FDC638APZ

Manufacturer:

ON Semiconductor ↗

File Size:

387.90 KB

Description:

P-channel mosfet.

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TAGS

FDC638APZ P-Channel MOSFET ON Semiconductor

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