FDC638APZ Datasheet - ON Semiconductor

FDC638APZ P-Channel MOSFET

This P *Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power app.

FDC638APZ Features

* Max rDS(on) = 43 mW at VGS =

* 4.5 V, ID =

* 4.5 A

* Max rDS(on) = 68 mW at VGS =

* 2.5 V, ID =

* 3.8 A

* Low Gate Charge (8 nC typical)

* High Performance Trench Technology for Extremely Low rDS(on)

* SUPERSOTt

* 6 Package:

FDC638APZ Datasheet (387.90 KB)