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FDC638APZ P-Channel MOSFET

FDC638APZ Description

MOSFET * P-Channel, 2.5 V Specified, POWERTRENCH) -20 V, -4.5 A, 43 mW FDC638APZ General .
This P. Channel 2.

FDC638APZ Features

* Max rDS(on) = 43 mW at VGS =
* 4.5 V, ID =
* 4.5 A
* Max rDS(on) = 68 mW at VGS =
* 2.5 V, ID =
* 3.8 A
* Low Gate Charge (8 nC typical)
* High Performance Trench Technology for Extremely Low rDS(on)
* SUPERSOTt
* 6 Package:

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