FDC638P Datasheet - ON Semiconductor

FDC638P P-Channel MOSFET

This P *Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power app.

FDC638P Features

* 4.5 A,

* 20 V

* RDS(on) = 48 mW @ VGS =

* 4.5 V

* RDS(on) = 65 mW @ VGS =

* 2.5 V

* Low Gate Charge (10 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(on)

* SUPERSOTt

* 6 Package: Small Foot

FDC638P Datasheet (307.71 KB)