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FDC638P P-Channel MOSFET

FDC638P Description

MOSFET * P-Channel, 2.5 V Specified, POWERTRENCH) -20 V, -4.5 A, 48 mW FDC638P General .
This P. Channel 2.

FDC638P Features

* 4.5 A,
* 20 V
* RDS(on) = 48 mW @ VGS =
* 4.5 V
* RDS(on) = 65 mW @ VGS =
* 2.5 V
* Low Gate Charge (10 nC Typical)
* High Performance Trench Technology for Extremely Low RDS(on)
* SUPERSOTt
* 6 Package: Small Foot

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ON Semiconductor FDC638P-like datasheet