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FDC638P

P-Channel MOSFET

FDC638P Features

* 4.5 A,

* 20 V

* RDS(on) = 48 mW @ VGS =

* 4.5 V

* RDS(on) = 65 mW @ VGS =

* 2.5 V

* Low Gate Charge (10 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(on)

* SUPERSOTt

* 6 Package: Small Foot

FDC638P General Description

This P

*Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

*state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power app.

FDC638P Datasheet (307.71 KB)

Preview of FDC638P PDF

Datasheet Details

Part number:

FDC638P

Manufacturer:

ON Semiconductor ↗

File Size:

307.71 KB

Description:

P-channel mosfet.

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TAGS

FDC638P P-Channel MOSFET ON Semiconductor

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