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FDC655BN

Single N-Channel MOSFET

FDC655BN Features

* Max RDS(ON) = 25 mW @ VGS = 10 V, ID = 6.3 A

* Max RDS(ON) = 33 mW @ VGS = 4.5 V, ID = 5.5 A

* Fast Switching

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(ON)

* This Device is Pb

* Free, Halide Free and is RoHS C

FDC655BN General Description

This N

*Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

*state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applicati.

FDC655BN Datasheet (364.29 KB)

Preview of FDC655BN PDF

Datasheet Details

Part number:

FDC655BN

Manufacturer:

ON Semiconductor ↗

File Size:

364.29 KB

Description:

Single n-channel mosfet.

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TAGS

FDC655BN Single N-Channel MOSFET ON Semiconductor

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