FDC655BN Datasheet - ON Semiconductor

FDC655BN Single N-Channel MOSFET

This N *Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applicati.

FDC655BN Features

* Max RDS(ON) = 25 mW @ VGS = 10 V, ID = 6.3 A

* Max RDS(ON) = 33 mW @ VGS = 4.5 V, ID = 5.5 A

* Fast Switching

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(ON)

* This Device is Pb

* Free, Halide Free and is RoHS C

FDC655BN Datasheet (364.29 KB)