HGTG40N60B3

N-Channel IGBT

ON Semiconductor

HGTG40N60B3 Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on

* state conduction loss of a bipolar transistor. The much lower on

* state voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching

HGTG40N60B3 General Description

Symbol Ratings Units Collector to Emitter Voltage BVCES 600 V Collector Current Continuous At TC = 25°C At TC = 110°C IC25 70 A IC110 40 Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous ICM 330 A VGES ±20 V Gate to Emitter Voltage Pulsed VGEM ±30 V Switch.

HGTG40N60B3 Datasheet (398.27 KB)