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FDD3860 N-Channel PowerTrench MOSFET

FDD3860 Description

FDD3860 N-Channel PowerTrench® MOSFET FDD3860 N-Channel PowerTrench® MOSFET 100 V, 29 A, 36 mΩ .
This N-Channel MOSFET is rugged gate version of ON Semiconductor‘s advanced Power Trench® process.

FDD3860 Features

* Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A
* High Performance Trench Technology for Extremely Low rDS(on)
* 100% UIL Tested

FDD3860 Applications

* Applications
* DC-AC Conversion
* Synchronous Rectifier G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Contin

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N-Channel PowerTrench MOSFET ON Semiconductor
ON Semiconductor FDD3860-like datasheet