FDMC86183 - N-Channel MOSFET

ON Semiconductor

FDMC86183 Datasheet Preview — Preview of FDMC86183 PDF

Datasheet Details

Part number	FDMC86183
Manufacturer	ON Semiconductor ↗
File Size	398.62 KB
Description	N-Channel MOSFET
Datasheet	FDMC86183-ONSemiconductor.pdf

FDMC86183 Product details

Description

This N Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized to minimise on state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 12.8 mW at VGS = 10 V, ID = 16 A.
Max RDS(on) = 34.6 mW at VGS = 6 V, ID = 8 A.
50% Lower Qrr than Other MOSFET Suppliers.
Lowers Switching Noise/EMI.
MSL1 Robust Package Design.
100% UIL Tested.
Pb.
Free, Halide Free and RoHS Compliant.

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Published: Feb 5, 2023 |