FDMS86101 - N-Channel MOSFET

ON Semiconductor

FDMS86101 Datasheet Preview — Preview of FDMS86101 PDF

Datasheet Details

Part number	FDMS86101
Manufacturer	ON Semiconductor ↗
File Size	469.98 KB
Description	N-Channel MOSFET
Datasheet	FDMS86101-ONSemiconductor.pdf

FDMS86101 Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that has been especially tailored to minimize the on state resistance and yet maintain superior switching performance.

Features

Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A.
Max RDS(on) = 13.5 mW at VGS = 6 V, ID = 9.5 A.
Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
MSL1 Robust Package Design.
100% UIL Tested.
100% Rg Tested.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Oct 15, 2019 |