Datasheet Details
- Part number
- FDS86141
- Manufacturer
- ON Semiconductor ↗
- File Size
- 327.05 KB
- Datasheet
- FDS86141-ONSemiconductor.pdf
- Description
- N-Channel MOSFET
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.Applications DC-DC Conversion D D D D SO-8 P
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