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FDS86240 - N-Channel MOSFET

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FDS86240 Product details

Description

Shielded Gate MOSFET Technology Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Surface Mount Package 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technolo

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ON Semiconductor FDS86240-like datasheet

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