Datasheet Details
- Part number
- FDS86242
- Manufacturer
- ON Semiconductor ↗
- File Size
- 382.92 KB
- Datasheet
- FDS86242-ONSemiconductor.pdf
- Description
- N-Channel Power MOSFET
Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A High performance trench technology for extremely low rDS(on) This N -Channel MOSFET is produ ced using ON Semiconductor‘s advanced Power T rench® process that has been optimized for rDS(on), switching per formance and ruggedness. High power and current handling capability in a widely used surface mount package 100% UIL Tested Applications DC/D
📁 Related Datasheet
📌 All Tags
FDS86242 Stock/Price