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IRF530 Power Field Effect Transistor

IRF530 Description

IRF530 Product Preview TMOS E *FET.™ Power Field Effect Transistor N *Channel Enhancement *Mode Silicon Gate This advanced TMOS p.

IRF530 Features

* 25°C 1600 1400 1200 Crss 1000 800 Ciss 600 400 200 0 10 Crss 50 5 VGS VDS Coss 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi. com 4 VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) t, TIME (ns

IRF530 Applications

* in power supplies, converters, and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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