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PDB2309L - P-Channel MOSFET

PDB2309L Description

20V P-Channel MOSFETs PDB2309L General .
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDB2309L Features

* -20V,-8.5A, RDS(ON) =28mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available

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Datasheet Details

Part number
PDB2309L
Manufacturer
Potens semiconductor
File Size
464.77 KB
Datasheet
PDB2309L-Potenssemiconductor.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET Potens semiconductor
Potens semiconductor PDB2309L-like datasheet