STG60H65FBD7 IGBT

STMicroelectronics

Description

STG60H65FBD7 Datasheet Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing C G E EGCD Product status link STG60H65FBD7 P.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

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Datasheet Specifications

Part number: STG60H65FBD7
Manufacturer: STMicroelectronics ↗
File Size: 423.90 KB
Datasheet: STG60H65FBD7-STMicroelectronics.pdf
Description: IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC = 60 A
* Safe paralleling

Applications

* Solar
* Welding

STG60H65FBD7 Distributors

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STG60H65FBD7 IGBT STMicroelectronics

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