STG60H65FBD7 Datasheet (STMicroelectronics)

STG60H65FBD7, IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Furthermore, the slig

STG60H65FBD7 Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC = 60 A

* Safe paralleling

* Tight parameter distribution Applications

* Sola