STGH30H65DFB-2AG Datasheet - STMicroelectronics

STGH30H65DFB-2AG IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the sligh.

STGH30H65DFB-2AG Features

* AEC-Q101 qualified

* High-speed switching series

* Maximum junction temperature: TJ = 175 °C

* VCE(sat) = 1.55 V (typ.) @ IC = 30 A

* Safer paralleling

* Tight parameter distribution

* Low thermal resistance

* Soft and very fast recov

STGH30H65DFB-2AG Datasheet (403.85 KB)