STGH30H65DFB-2AG IGBT

STMicroelectronics

Description

STGH30H65DFB-2AG Datasheet Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H²PAK-2 package TAB 23 1 H2PAK-2 C(T.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

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Datasheet Specifications

Part number: STGH30H65DFB-2AG
Manufacturer: STMicroelectronics ↗
File Size: 403.85 KB
Datasheet: STGH30H65DFB-2AG-STMicroelectronics.pdf
Description: IGBT

Features

* AEC-Q101 qualified
* High-speed switching series
* Maximum junction temperature: TJ = 175 °C
* VCE(sat) = 1.55 V (typ. ) @ IC = 30 A
* Safer paralleling
* Tight parameter distribution
* Low thermal resistance
* Soft and very fast recov

Applications

* DC/DC converter for EV/HEV

STGH30H65DFB-2AG Distributors

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STGH30H65DFB-2AG IGBT STMicroelectronics

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