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STGH30H65DFB-2AG

IGBT

STGH30H65DFB-2AG Features

* AEC-Q101 qualified

* High-speed switching series

* Maximum junction temperature: TJ = 175 °C

* VCE(sat) = 1.55 V (typ.) @ IC = 30 A

* Safer paralleling

* Tight parameter distribution

* Low thermal resistance

* Soft and very fast recov

STGH30H65DFB-2AG General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the sligh.

STGH30H65DFB-2AG Datasheet (403.85 KB)

Preview of STGH30H65DFB-2AG PDF

Datasheet Details

Part number:

STGH30H65DFB-2AG

Manufacturer:

STMicroelectronics ↗

File Size:

403.85 KB

Description:

Igbt.
STGH30H65DFB-2AG Datasheet Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H²PAK-2 package TAB 23 1 H2PAK-2 C(T.

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TAGS

STGH30H65DFB-2AG IGBT STMicroelectronics

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