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STGH30H65DFB-2AG - IGBT

STMicroelectronics

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Datasheet Details

Part number	STGH30H65DFB-2AG
Manufacturer	STMicroelectronics ↗
File Size	403.85 KB
Description	IGBT
Datasheet	STGH30H65DFB-2AG-STMicroelectronics.pdf

STGH30H65DFB-2AG Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

AEC-Q101 qualified.
High-speed switching series.
Maximum junction temperature: TJ = 175 °C.
VCE(sat) = 1.55 V (typ. ) @ IC = 30 A.
Safer paralleling.
Tight parameter distribution.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.

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Published: Mar 1, 2023 |