STGHU30M65DF2AG Automotive-grade trench gate field-stop IGBT

STMicroelectronics

Description

STGHU30M65DF2AG Datasheet Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in an HU3PAK package .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

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Datasheet Specifications

Part number: STGHU30M65DF2AG
Manufacturer: STMicroelectronics ↗
File Size: 1.05 MB
Datasheet: STGHU30M65DF2AG-STMicroelectronics.pdf
Description: Automotive-grade trench gate field-stop IGBT

Features

* TAB 7 1 HU3PAK C(TAB)
* AEC-Q101 qualified
* Maximum junction temperature: TJ = 175 °C
* 6 μs of minimum short-circuit withstand time
* VCE(sat) = 1.6 V (typ. ) @ IC = 30 A
* Tight parameter distribution
* Safer paralleling
* Low therma

Applications

* G(1) K(2) E(3,4,5,6,7)
* Automotive motor control
* e-compressor
* Industrial motor control

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STGHU30M65DF2AG Automotive-grade trench gate field-stop IGBT STMicroelectronics

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