Datasheet Details
Part number:
STGHU30M65DF2AG
Manufacturer:
File Size:
1.05 MB
Description:
Automotive-grade trench gate field-stop igbt.
STGHU30M65DF2AG-STMicroelectronics.pdf
Datasheet Details
Part number:
STGHU30M65DF2AG
Manufacturer:
File Size:
1.05 MB
Description:
Automotive-grade trench gate field-stop igbt.
STGHU30M65DF2AG, Automotive-grade trench gate field-stop IGBT
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Furthe
STGHU30M65DF2AG Features
* TAB 7 1 HU3PAK C(TAB)
* AEC-Q101 qualified
* Maximum junction temperature: TJ = 175 °C
* 6 μs of minimum short-circuit withstand time
* VCE(sat) = 1.6 V (typ.) @ IC = 30 A
* Tight parameter distribution
* Safer paralleling
* Low therma
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