STGHU30M65DF2AG

Automotive-grade trench gate field-stop IGBT

STMicroelectronics

STGHU30M65DF2AG Features

* TAB 7 1 HU3PAK C(TAB)

* AEC-Q101 qualified

* Maximum junction temperature: TJ = 175 °C

* 6 μs of minimum short-circuit withstand time

* VCE(sat) = 1.6 V (typ.) @ IC = 30 A

* Tight parameter distribution

* Safer paralleling

* Low therma

STGHU30M65DF2AG General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthe.

STGHU30M65DF2AG Datasheet (1.05 MB)