STH400N4F6-6, STH400N4F6-2 Datasheet (STMicroelectronics)

STH400N4F6-6, STH400N4F6-2, N-channel Power MOSFET

G(1) S(2, 3) H2PAK-2 G(1) S(2, 3, 4, 5, 6, 7) H2PAK-6 AM14551V1 These devices are N-channel Power MOSFETs th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.

Order codes STH400N

STH400N4F6-6 Features

* TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Order codes VDS RDS(on) max ID STH400N4F6-2 STH400N4F6-6 40 V 1.15 mΩ 180 A

* Designed for automotive applications and AEC-Q101 qualified

* Low gate charge

* Very low on-resistance

* High avalanche ruggedness Figure 1. Inter