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STH400N4F6-6

N-channel Power MOSFET

STH400N4F6-6 Features

* TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Order codes VDS RDS(on) max ID STH400N4F6-2 STH400N4F6-6 40 V 1.15 mΩ 180 A

* Designed for automotive applications and AEC-Q101 qualified

* Low gate charge

* Very low on-resistance

* High avalanche ruggedness Figure 1. Inter

STH400N4F6-6 General Description

G(1) S(2, 3) H2PAK-2 G(1) S(2, 3, 4, 5, 6, 7) H2PAK-6 AM14551V1 These devices are N-channel Power MOSFETs th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. Order codes STH400N.

STH400N4F6-6 Datasheet (463.35 KB)

Preview of STH400N4F6-6 PDF

Datasheet Details

Part number:

STH400N4F6-6

Manufacturer:

STMicroelectronics ↗

File Size:

463.35 KB

Description:

N-channel power mosfet.
STH400N4F6-2, STH400N4F6-6 Automotive-grade N-channel 40 V, 0.85 mΩ typ.,180 A STripFET™ VI DeepGATE™ Power MOSFETs Datasheet - production data Featu.

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TAGS

STH400N4F6-6 N-channel Power MOSFET STMicroelectronics

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