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STH400N4F6-6, STH400N4F6-2 Datasheet - STMicroelectronics

STH400N4F6-6 N-channel Power MOSFET

G(1) S(2, 3) H2PAK-2 G(1) S(2, 3, 4, 5, 6, 7) H2PAK-6 AM14551V1 These devices are N-channel Power MOSFETs th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. Order codes STH400N.

STH400N4F6-6 Features

* TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Order codes VDS RDS(on) max ID STH400N4F6-2 STH400N4F6-6 40 V 1.15 mΩ 180 A

* Designed for automotive applications and AEC-Q101 qualified

* Low gate charge

* Very low on-resistance

* High avalanche ruggedness Figure 1. Inter

STH400N4F6-2-STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STH400N4F6-6, STH400N4F6-2. Please refer to the document for exact specifications by model.
STH400N4F6-6 Datasheet Preview Page 2 STH400N4F6-6 Datasheet Preview Page 3

Datasheet Details

Part number:

STH400N4F6-6, STH400N4F6-2

Manufacturer:

STMicroelectronics ↗

File Size:

463.35 KB

Description:

N-channel power mosfet.

Note:

This datasheet PDF includes multiple part numbers: STH400N4F6-6, STH400N4F6-2.
Please refer to the document for exact specifications by model.

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STH400N4F6-6 STH400N4F6-2 N-channel Power MOSFET STMicroelectronics

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