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STH410N4F7-2AG N-channel Power MOSFET

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Description

STH410N4F7-2AG, STH410N4F7-6AG Automotive-grade N-channel 40 V, 0.8 mΩ typ., 200 A STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datashee.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while.

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Features

* Order code VDS STH410N4F7-2AG 40 V STH410N4F7-6AG RDS(on) max. 1.1 mΩ ID 200 A PTOT 365 W

Applications

* and AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness Applications

STH410N4F7-2AG Distributors

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