* Order code VDS STH410N4F7-2AG 40 V STH410N4F7-6AG RDS(on) max. 1.1 mΩ ID 200 A PTOT 365 W
* Designed for automotive applications and AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity
* High
STH410N4F7-2AG Datasheet (683.94 KB)
STH410N4F7-2AG
683.94 KB
N-channel power mosfet.
STH410N4F7-2AG, STH410N4F7-6AG
Automotive-grade N-channel 40 V, 0.8 mΩ typ., 200 A STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datashee.
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