STH410N4F7-6AG, STH410N4F7-2AG N-channel Power MOSFET

STMicroelectronics

Description

STH410N4F7-2AG, STH410N4F7-6AG Automotive-grade N-channel 40 V, 0.8 mΩ typ., 200 A STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datashee.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while.

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STH410N4F7-6AG Datasheet Preview — This datasheet PDF includes multiple part numbers: STH410N4F7-6AG, STH410N4F7-2AG. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: STH410N4F7-6AG, STH410N4F7-2AG
Manufacturer: STMicroelectronics ↗
File Size: 683.94 KB
Datasheet: STH410N4F7-2AG-STMicroelectronics.pdf
Description: N-channel Power MOSFET
Note: This datasheet PDF includes multiple part numbers: STH410N4F7-6AG, STH410N4F7-2AG.
Please refer to the document for exact specifications by model.

Features

* Order code VDS STH410N4F7-2AG 40 V STH410N4F7-6AG RDS(on) max. 1.1 mΩ ID 200 A PTOT 365 W

Applications

* and AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness Applications

STH410N4F7-6AG Distributors

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STH410N4F7-2AG N-channel Power MOSFET STMicroelectronics

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