STP150N10F7 - N-CHANNEL POWER MOSFET
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
6 $0Y Order codes STI150N10F7 STP150N10F7 T
STP150N10F7 Features
* Order codes STI150N10F7 STP150N10F7 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness Applications
* Switching app
