STP150N10F7AG Datasheet - STMicroelectronics

STP150N10F7AG Automotive N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STP150N10F7AG Product summary Orde.

STP150N10F7AG Features

* TAB Order code VDS RDS(on) max. ID STP150N10F7AG 100 V 4.2 mΩ 110 A TO-220 1 23 D(2, TAB)

* Designed for automotive application

* Standard level VGS(TH)

* 175°C junction temperature

* 100% avalanche rated Applications

* Switching applications G(1

STP150N10F7AG-STMicroelectronics.pdf