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STS5DP3LLH6 Dual P-CHANNEL POWER MOSFET

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Description

STS5DP3LLH6 DUAL P-Channel 30 V, 0.04 Ω typ., 5 A STripFET™ VI DeepGATE™ Power MOSFET in a SO-8 package Datasheet - preliminary data .
This device is a DUAL P-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

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Features

* SO-8 Figure 1. Internal schematic diagram Order code STS5DP3LLH6 VDS 30 V RDS(on) max ID 0.06 Ω at 10 V 5 A
* RDS(on)
* Qg industry benchmark
* Extremely low on-resistance RDS(on)
* High avalanche ruggedness

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