STS5DP3LLH6

Dual P-CHANNEL POWER MOSFET

STMicroelectronics

STS5DP3LLH6 Features

* SO-8 Figure 1. Internal schematic diagram Order code STS5DP3LLH6 VDS 30 V RDS(on) max ID 0.06 Ω at 10 V 5 A

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* High avalanche ruggedness

* Low gate drive power losses Applications

STS5DP3LLH6 General Description

This device is a DUAL P-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Order code STS5DP3LLH6 Table 1. Device summary Marking Package 5K3L SO-8 Packag.

STS5DP3LLH6 Datasheet (355.29 KB)