Datasheet Details
- Part number
- STSJ2NM60
- Manufacturer
- STMicroelectronics ↗
- File Size
- 178.55 KB
- Datasheet
- STSJ2NM60_STMicroelectronics.pdf
- Description
- N-CHANNEL POWER MOSFET
STSJ2NM60 Description
www.DataSheet4U.com N-CHANNEL 600V - 2.8Ω - 2A PowerSO-8 Zener-Protected MDmesh™ POWER MOSFET TYPE STSJ2NM60 s s s s STSJ2NM60 VDSS 600 V RDS(on) .STSJ2NM60 Features
* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltaSTSJ2NM60 Applications
* The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain📁 Related Datasheet
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