Datasheet Details
- Part number
- STSJ3NM50
- Manufacturer
- STMicroelectronics ↗
- File Size
- 176.48 KB
- Datasheet
- STSJ3NM50_STMicroelectronics.pdf
- Description
- N-CHANNEL POWER MOSFET
STSJ3NM50 Description
www.DataSheet4U.com N-CHANNEL 500V - 2.5Ω - 3A PowerSO-8 Zener-Protected MDmesh™ POWER MOSFET TYPE STSJ3NM50 s s s s STSJ3NM50 VDSS 500 V RDS(on) .STSJ3NM50 Features
* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltaSTSJ3NM50 Applications
* The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain📁 Related Datasheet
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