Datasheet Details
- Part number
- KM736V789
- Manufacturer
- Samsung Semiconductor
- File Size
- 296.99 KB
- Datasheet
- KM736V789_SamsungSemiconductor.pdf
- Description
- 128Kx36 Synchronous SRAM
KM736V789 Description
KM736V789 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev.No.0.0 0.1 0.2 0.3 History Ini.
The KM736V789 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC base.
KM736V789 Features
* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 3.3V+0.3V/-0.165V Power Supply.
* VDDQ Supply Voltage 3.3V+0.3V/-0.165V fo
KM736V789 Applications
* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address
📁 Related Datasheet
📌 All Tags