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LE28FV4001R 4MEG (52488 x 8 Bits) Flash Memory

LE28FV4001R Description

Ordering number : EN *5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series .

LE28FV4001R Features

* Highly reliable 2 layer polysilicon CMOS flash EEPROM process
* Read and write operations using a 3.3 V single-voltage power supply
* High-speed access: 200 and 250 ns
* Low power
* Operating (read): 10 mA (maximum)
* Standby: 20 µA (maximum)

LE28FV4001R Applications

* use erase operations that are not whole chip erase operations but rather are single sector erase operations, this sector erase operation significantly increases the flexibility and ease-of-use of the LE28F4001 Series. The setup command is executed by writing 20H to the command register. An execute c

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Datasheet Details

Part number
LE28FV4001R
Manufacturer
Sanyo Semicon Device
File Size
230.16 KB
Datasheet
LE28FV4001R_SanyoSemiconDevice.pdf
Description
4MEG (52488 x 8 Bits) Flash Memory

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📌 All Tags

4MEG 52488 Bits Flash Memory Sanyo Semicon Device
Sanyo Semicon Device LE28FV4001R-like datasheet