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TSM160N10 100V N-Channel Power MOSFET

TSM160N10 Description

TSM160N10 100V N-Channel Power MOSFET TO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 5.5 @ VGS =10V ID (.
only.

TSM160N10 Features

* Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max. ) Low gate charge typical @ 154nC (Typ. ) Low Crss typical @ 260pF (Typ. ) Block Diagram Ordering Information Part No. TSM160N10CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC

TSM160N10 Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: B13

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Datasheet Details

Part number
TSM160N10
Manufacturer
Taiwan Semiconductor
File Size
450.22 KB
Datasheet
TSM160N10-TaiwanSemiconductor.pdf
Description
100V N-Channel Power MOSFET

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100V N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM160N10-like datasheet