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TSM1NB60 N-Channel Power MOSFET

TSM1NB60 Description

TSM1NB60 600V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) SOT-223 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 600 RDS(.
The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process.

TSM1NB60 Features

* Low RDS(ON) 8Ω (Typ. ) Low gate charge typical @ 6.1nC (Typ. ) Low Crss typical @ 4.2pF (Typ. ) Block Diagram Ordering Information Part No. TSM1NB60CH C5G TSM1NB60CP ROG Package TO-251 TO-252 Packing 75pcs / Tube 2.5Kpcs / 13” Reel 2.5Kpcs / 13” Reel N-Channel MOSFET TSM1NB60CW R

TSM1NB60 Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8/8 Version: A12

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Datasheet Details

Part number
TSM1NB60
Manufacturer
Taiwan Semiconductor
File Size
413.66 KB
Datasheet
TSM1NB60-TaiwanSemiconductor.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM1NB60-like datasheet