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TSM1NB60S 600V N-Channel Power MOSFET

TSM1NB60S Description

TSM1NB60S 600V N-Channel Power MOSFET TO-92 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 10 @ VGS =10V ID (A) .
The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process.

TSM1NB60S Features

* Low RDS(ON) 8Ω (Typ. ) Low gate charge typical @ 6.1nC (Typ. ) Low Crss typical @ 4.2pF (Typ. ) Block Diagram Ordering Information Part No. TSM1NB60SCT B0 TSM1NB60SCT B0G TSM1NB60SCT A3 Package TO-92 TO-92 TO-92 Packing 1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo N-Channel

TSM1NB60S Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A12

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Datasheet Details

Part number
TSM1NB60S
Manufacturer
Taiwan Semiconductor
File Size
135.09 KB
Datasheet
TSM1NB60S-TaiwanSemiconductor.pdf
Description
600V N-Channel Power MOSFET

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600V N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM1NB60S-like datasheet