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1SS321 Datasheet - Toshiba Semiconductor

1SS321 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS321 Low-Voltage High-Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage: VF(2) = 0.42 V (typ.) Low reverse current: IR = 500 nA (max) Small package: SC-59 Note1: For detail information, please contact to our sales. 1SS321 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward cur.

1SS321_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SS321

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

268.13 KB

Description:

Silicon epitaxial schottky barrier type diode.

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1SS321 1SS321 Silicon Epitaxial Schottky Barrier Type Diode Toshiba Semiconductor

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