Datasheet4U Logo Datasheet4U.com

1SS321 Datasheet - Toshiba Semiconductor

1SS321 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS321 Low-Voltage High-Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage: VF(2) = 0.42 V (typ.) Low reverse current: IR = 500 nA (max) Small package: SC-59 Note1: For detail information, please contact to our sales. 1SS321 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward cur.

1SS321 Datasheet (268.13 KB)

Preview of 1SS321 PDF

Datasheet Details

Part number:

1SS321

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

268.13 KB

Description:

Silicon epitaxial schottky barrier type diode.

📁 Related Datasheet

1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE (SEMTECH ELECTRONICS)

1SS321 LOW VOLTAGE HIGH SPEED SWITCHING (Guangdong Kexin Industrial)

1SS322 Silicon Epitaxial Schottky Barrier Type Diode (Toshiba Semiconductor)

1SS322 LOW VOLTAGE HIGH SPEED SWITCHING DIODES (Kexin)

1SS300 Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)

1SS300 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES (Kexin)

1SS301 Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)

1SS301 SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR)

1SS301 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES (Kexin)

1SS302 Diode (Toshiba Semiconductor)

TAGS

1SS321 Silicon Epitaxial Schottky Barrier Type Diode Toshiba Semiconductor

Image Gallery

1SS321 Datasheet Preview Page 2 1SS321 Datasheet Preview Page 3

1SS321 Distributor