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1SS322 Silicon Epitaxial Schottky Barrier Type Diode

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS322 Low Voltage High Speed Switching * Low forward voltage * Low reverse current

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* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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Toshiba Semiconductor 1SS322-like datasheet