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1SS322 Datasheet - Toshiba Semiconductor

1SS322 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS322 Low Voltage High Speed Switching Low forward voltage Low reverse current Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC 70 1SS322 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Power dissipation P 100.

1SS322 Datasheet (290.55 KB)

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Datasheet Details

Part number:

1SS322

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

290.55 KB

Description:

Silicon epitaxial schottky barrier type diode.

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1SS322 Silicon Epitaxial Schottky Barrier Type Diode Toshiba Semiconductor

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