1SS322 Datasheet (Toshiba Semiconductor) - Silicon Epitaxial Schottky Barrier Type Diode

1SS322, Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS322 Low Voltage High Speed Switching Low forward voltage Low reverse current Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC 70 1SS322 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Power dissipation P 100