TPCC8102 Datasheet - Toshiba Semiconductor

TPCC8102 Field Effect Transistor Silicon P-Channel MOS Type

TPCC8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ) TPCC8102 Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 14.5 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1.0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source.

TPCC8102 Features

* ily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sh

TPCC8102_ToshibaSemiconductor.pdf