* (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 13.5 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit TPCC8131 1, 2, 3: Source 4: Gate 5,
TPCC8131 Datasheet (235.15 KB)
TPCC8131
Toshiba ↗ Semiconductor
235.15 KB
Silicon p-channel mosfet.
MOSFETs Silicon P-Channel MOS (U-MOS) TPCC8131 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Featu.
📁 Related Datasheet
TPCC8136 Silicon P-Channel MOSFET (Toshiba)
TPCC8137 Silicon P-Channel MOSFET (Toshiba Semiconductor)
TPCC8138 Silicon P-Channel MOSFET (Toshiba)
TPCC8102 Field Effect Transistor Silicon P-Channel MOS Type (Toshiba Semiconductor)
TPCC8103 Noteboook PC Applications Portable Eqipment Applications (Toshiba Semiconductor)
TPCC8104 Silicon P-Channel MOSFET (Toshiba Semiconductor)
TPCC8105 Silicon P-Channel MOSFET (Toshiba Semiconductor)
TPCC8106 Silicon P-Channel MOSFET (Toshiba Semiconductor)
TPCC8107 Silicon P-Channel MOSFET (Toshiba Semiconductor)
TPCC8001-H Field Effect Transistor (Toshiba Semiconductor)
