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TPCC8131 Datasheet - Toshiba Semiconductor

TPCC8131 Silicon P-Channel MOSFET

TPCC8131 Features

* (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 13.5 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit TPCC8131 1, 2, 3: Source 4: Gate 5,

TPCC8131 Datasheet (235.15 KB)

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Datasheet Details

Part number:

TPCC8131

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

235.15 KB

Description:

Silicon p-channel mosfet.

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TPCC8131 Silicon P-Channel MOSFET Toshiba Semiconductor

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