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TPCC8137

Silicon P-Channel MOSFET

TPCC8137 Features

* (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 8.0 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCC8137 1, 2, 3: Source 4: Gate 5, 6

TPCC8137 Datasheet (230.27 KB)

Preview of TPCC8137 PDF

Datasheet Details

Part number:

TPCC8137

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

230.27 KB

Description:

Silicon p-channel mosfet.

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TPCC8137 Silicon P-Channel MOSFET Toshiba Semiconductor

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