* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 9.5 mΩ (typ.) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (5) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPCC8106 TSON
TPCC8106 Datasheet (289.35 KB)
TPCC8106
Toshiba ↗ Semiconductor
289.35 KB
Silicon p-channel mosfet.
MOSFETs Silicon P-Channel MOS (U-MOS) TPCC8106 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulat.
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