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TPCC8106 Datasheet - Toshiba Semiconductor

TPCC8106 Silicon P-Channel MOSFET

TPCC8106 Features

* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 9.5 mΩ (typ.) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (5) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPCC8106 TSON

TPCC8106 Datasheet (289.35 KB)

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Datasheet Details

Part number:

TPCC8106

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

289.35 KB

Description:

Silicon p-channel mosfet.

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TPCC8106 Silicon P-Channel MOSFET Toshiba Semiconductor

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