TPCC8103 Datasheet - Toshiba Semiconductor

TPCC8103 Noteboook PC Applications Portable Eqipment Applications

TPCC8103 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ) TPCC8103 Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 9.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1.0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain.

TPCC8103 Features

* unction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and compl

TPCC8103 Datasheet (280.47 KB)