TPCC8103 Datasheet - Toshiba Semiconductor

TPCC8103 Noteboook PC Applications Portable Eqipment Applications

TPCC8103 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ) TPCC8103 Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 9.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1.0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain.

TPCC8103 Features

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TPCC8103_ToshibaSemiconductor.pdf