TPCC8138 - Silicon P-Channel MOSFET

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Toshiba

Part number	TPCC8138
Manufacturer	Toshiba
File Size	232.03 KB
Description	Silicon P-Channel MOSFET
Datasheet	TPCC8138 Datasheet
Additional preview pages of the TPCC8138 datasheet.

(1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 6.0 mΩ (typ. ) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCC8138 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage V.

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Published: Nov 11, 2013 |