TPCC8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) TPCC8105 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 6.0 mΩ (typ.)( VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 0.5
TPCC8105-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
TPCC8105
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
262.36 KB
Description:
Silicon p-channel mosfet.