TPCC8136 - Silicon P-Channel MOSFET

Product Overview

Toshiba

Part number	TPCC8136
Manufacturer	Toshiba
File Size	231.36 KB
Description	Silicon P-Channel MOSFET
Datasheet	TPCC8136 Datasheet
Additional preview pages of the TPCC8136 datasheet.

(1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ. ) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCC8136 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate.

📁 Similar Datasheet

TPCC8131 - Silicon P-Channel MOSFET (Toshiba Semiconductor)
TPCC8137 - Silicon P-Channel MOSFET (Toshiba Semiconductor)
TPCC8102 - Field Effect Transistor Silicon P-Channel MOS Type (Toshiba Semiconductor)
TPCC8103 - Noteboook PC Applications Portable Eqipment Applications (Toshiba Semiconductor)
TPCC8104 - Silicon P-Channel MOSFET (Toshiba Semiconductor)
TPCC8105 - Silicon P-Channel MOSFET (Toshiba Semiconductor)
TPCC8106 - Silicon P-Channel MOSFET (Toshiba Semiconductor)
TPCC8107 - Silicon P-Channel MOSFET (Toshiba Semiconductor)

Other Datasheets by Toshiba

Published: Nov 11, 2013 |