TPCC8136 Datasheet, Mosfet, Toshiba

✔ TPCC8136 Features

(1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max)

✔ TPCC8136 Application

Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-so

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TPCC8136

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📄 Datasheet

Description:

Silicon p-channel mosfet.

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TPCC8136 Silicon P-Channel MOSFET Toshiba