* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3:
TPCC8104 Datasheet (232.15 KB)
TPCC8104
Toshiba ↗ Semiconductor
232.15 KB
Silicon p-channel mosfet.
TPCC8104 MOSFETs Silicon P-Channel MOS (U-MOS) TPCC8104 1. Applications Lithium-Ion Secondary Batteries Power Management Switche.
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