* (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 23.5 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPCC8107 TSON Advance 1,2,3: Sourc
TPCC8107 Datasheet (275.29 KB)
TPCC8107
Toshiba ↗ Semiconductor
275.29 KB
Silicon p-channel mosfet.
MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8107 1. Applications Motor Drivers DC-DC Converters Switching Voltage Reg.
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